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IXFH 110N10P IXFV110N10P
IXFV 110N10PS
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
TO-247 (IXFH) Outline
g fs
V DS = 10 V; I D = 0.5 I D25 , pulse test
30
40
S
C iss
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
3550
1370
pF
pF
1
2
3
C rss
t d(on)
440
21
pF
ns
t r
V GS = 10 V, V DS = 0.5 V DSS , I D = 60 A
25
ns
t d(off)
t f
R G = 4 ? (External)
65
25
ns
ns
Terminals: 1 - Gate 2 - Drain
3 - Source TAB - Drain
Dim. Millimeter Inches
Q g(on)
Q gs
Q gd
R thJC
R thCS
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
(TO-247)
110
25
62
0.21
nC
nC
nC
0.31 ° C/W
° C/W
Min. Max.
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
1.65 2.13
b 1
b 2
2.87 3.12
C .4 .8
D 20.80 21.46
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
.610 .640
0.205 0.225
.780 .800
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
.177
.140 .144
0.232 0.252
.170 .216
I S
V GS = 0 V
110
A
S 6.15 BSC
242 BSC
I SM
V SD
Repetitive
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
250
1.5
A
V
PLUS220 (IXFV) Outline
t rr
Q RM
I F = 25 A, -di/dt = 100 A/ μ s
V R = 50 V, V GS = 0 V
0.6
150 ns
μ C
PLUS220SMD (IXFV_S) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6771478 B2
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