IXFH 110N10P IXFV110N10P
IXFV 110N10PS
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
TO-247 (IXFH) Outline
g fs
V DS = 10 V; I D = 0.5 I D25 , pulse test
30
40
S
C iss
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
3550
1370
pF
pF
1
2
3
C rss
t d(on)
440
21
pF
ns
t r
V GS = 10 V, V DS = 0.5 V DSS , I D = 60 A
25
ns
t d(off)
t f
R G = 4 ? (External)
65
25
ns
ns
Terminals: 1 - Gate 2 - Drain
3 - Source TAB - Drain
Dim. Millimeter Inches
Q g(on)
Q gs
Q gd
R thJC
R thCS
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
(TO-247)
110
25
62
0.21
nC
nC
nC
0.31 ° C/W
° C/W
Min. Max.
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
1.65 2.13
b 1
b 2
2.87 3.12
C .4 .8
D 20.80 21.46
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
.610 .640
0.205 0.225
.780 .800
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
.177
.140 .144
0.232 0.252
.170 .216
I S
V GS = 0 V
110
A
S 6.15 BSC
242 BSC
I SM
V SD
Repetitive
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
250
1.5
A
V
PLUS220 (IXFV) Outline
t rr
Q RM
I F = 25 A, -di/dt = 100 A/ μ s
V R = 50 V, V GS = 0 V
0.6
150 ns
μ C
PLUS220SMD (IXFV_S) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6771478 B2
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相关代理商/技术参数
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IXFV12N120P 功能描述:MOSFET 12 Amps 1200V 1 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFV12N120PS 功能描述:MOSFET 12 Amps 1200V 1 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFV12N80P 功能描述:MOSFET 12 Amps 800V 0.85 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFV12N80PS 功能描述:MOSFET 12 Amps 800V 0.85 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube